Features of simulation of information and measurement systems character-istics of microsystem technology devices
DOI:
https://doi.org/10.31649/mccs2022.23Keywords:
simulation modeling, , information and measurement system, MatLab Simulink, device of microsystem technology, physical characteristicsAbstract
The necessity of simulation modeling of information and measurement systems of physical characteristics of microsystem technology devices is proven and the features of such modeling are shown. It is shown that the application of mathematical modeling methods for microsystem technology devices is not correct due to the inconsistency of classical physical laws for micro- and nano-sized objects. At the same time, it was established that the use of simulation models and modern computer tools, which can qualitatively implement these methods, allows for high-quality modeling of microsystem technology devices at a qualitatively new level in real time. It was found that the advantages of such simulation models (implemented on the basis of the MatLab Simulink mathematical processor) are the possibility of taking into account processes and phenomena that take place at the micrometric level (microcapillary phenomena, surface microcurrent and tribocharge, exodiffusion of electrons from the surface, intermolecular interaction, etc.). In the course of the simulation, simulation models of information and measurement systems of various physical characteristics (surface charge, capillary and intermolecular interaction, temperature gradient) that can occur on stationary and dynamic surfaces of microsystem components of devices were built and investigated. The verification of the obtained simulation results showed their high convergence with the experimental results (the discrepancy between the simulation results and the experimentally obtained data did not exceed 8.5%), as well as accuracy (the relative error in determining such characteristics was 4.5-11.2%) and reliability (probability of obtaining adequate results, not less than 0.996) of the obtained model. The authors suggested using the results obtained as a result of simulation modeling in the design of information and measurement systems of physical characteristics of microsystem technology devices for various purposes.
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